公开(公告)号：US20230037833A1

公开(公告)日：2023-02-09

申请号：US17970777

申请日：2022-10-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byounghak HONG ,  Seunghyun SONG ,  Kang III SEO ,  Hwichan JUN ,  lnchan HWANG

IPC: H01L29/06 ,  H01L27/092 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786

Abstract: A semiconductor device include: a substrate; a 1st transistor formed above the substrate, the 1st transistor including a 1st channel set of a plurality of 1st nanosheet layers, a 1st gate structure surrounding the 1st nanosheet layers, and 1st and 2nd source/drain regions at both ends of the 1st channel set; and a 2nd transistor formed above the 1st transistor in a vertical direction, the 2nd transistor including a 2nd channel set of a plurality of 2nd nanosheet layers, a 2nd gate structure surrounding the 2nd nanosheet layers, and 3rd and 4th source/drain regions at both ends of the 2nd channel set, wherein the 1st channel set has a greater width than the 2nd channel set, wherein a number of the 1st nanosheet layers is smaller than a number of the 2nd nanosheet layers, and wherein a sum of effective channel widths of the 1st nanosheet layers is substantially equal to a sum of effective channel width of the 2nd nanosheet layers.