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公开(公告)号:US20230037833A1
公开(公告)日:2023-02-09
申请号:US17970777
申请日:2022-10-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Byounghak HONG , Seunghyun SONG , Kang III SEO , Hwichan JUN , lnchan HWANG
IPC: H01L29/06 , H01L27/092 , H01L29/417 , H01L29/423 , H01L29/786
Abstract: A semiconductor device include: a substrate; a 1st transistor formed above the substrate, the 1st transistor including a 1st channel set of a plurality of 1st nanosheet layers, a 1st gate structure surrounding the 1st nanosheet layers, and 1st and 2nd source/drain regions at both ends of the 1st channel set; and a 2nd transistor formed above the 1st transistor in a vertical direction, the 2nd transistor including a 2nd channel set of a plurality of 2nd nanosheet layers, a 2nd gate structure surrounding the 2nd nanosheet layers, and 3rd and 4th source/drain regions at both ends of the 2nd channel set, wherein the 1st channel set has a greater width than the 2nd channel set, wherein a number of the 1st nanosheet layers is smaller than a number of the 2nd nanosheet layers, and wherein a sum of effective channel widths of the 1st nanosheet layers is substantially equal to a sum of effective channel width of the 2nd nanosheet layers.