公开(公告)号：US20160352076A1

公开(公告)日：2016-12-01

申请号：US14994283

申请日：2016-01-13

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  KOREA PHOTONICS TECHNOLOGY INSTITUTE

Inventor： Jaesoong LEE ,  Jinwoo JU ,  Youngho SONG

IPC: H01S5/343 ,  H01S5/32 ,  H01S5/042

CPC classification number: H01S5/34333 ,  H01S5/0425 ,  H01S5/2081 ,  H01S5/2272 ,  H01S5/3202 ,  H01S5/3428 ,  H01S2304/12

Abstract: Provided are a semiconductor laser diode and a method for fabricating the same. The semiconductor laser diode includes a c-plane substrate, a group III nitride layer disposed on the c-plane substrate, and a first semiconductor layer, an active layer, and a second semiconductor layer disposed on the group III nitride layer in the stated order, wherein each of the first semiconductor layer and the second semiconductor layer is exposed to the outside of the semiconductor laser diode.

Abstract translation: 提供半导体激光二极管及其制造方法。 半导体激光二极管包括c面基板，设置在c面基板上的III族氮化物层，以及按照所述顺序设置在III族氮化物层上的第一半导体层，有源层和第二半导体层 其中，所述第一半导体层和所述第二半导体层中的每一个暴露于所述半导体激光二极管的外部。