公开(公告)号：US20230119534A1

公开(公告)日：2023-04-20

申请号：US17804851

申请日：2022-05-31

Applicant: SAMSUNG ELECTRONICS CO.,LTD.

Inventor： WIJIK LEE ,  KWANWOO NOH ,  HYEONJONG SONG

IPC: G11C11/4096 ,  G11C11/4078 ,  G11C11/4074

Abstract: A nonvolatile memory device includes a plurality of memory cells that have a first state and a second state different from each other. A method of searching a read voltage of the nonvolatile memory device includes determining a number n that represents a number of times a data read operation is performed, selecting n read voltage levels of the read voltage such that a number of read voltage levels is equal to the number of times the data read operation, where the n read voltage levels differ from each other, generating n cell count values by performing n data read operations on the plurality of memory cells using all of the n read voltage levels, and generating an optimal read voltage level of the read voltage by performing a regression analysis based on a first-order polynomial using the n read voltage levels and the n cell count values.