公开(公告)号：US20250095971A1

公开(公告)日：2025-03-20

申请号：US18640181

申请日：2024-04-19

Applicant: SAMSUNG ELECTRONICS CO. LTD.

Inventor： Ji Mo LEE ,  kyung-Sun Kim ,  Dong Hyeon Na ,  Jung Hyun Song ,  Myeong Soo Shin ,  Seung Bo Shim ,  Kui Hyun Yoon ,  Jun Ho Lee ,  Woong Jin Cheon ,  Dong Seok Han

IPC: H01J37/32

Abstract: A plasma processing apparatus includes: a plasma chamber; a radio frequency (RF) power supply configured to generate plasma in the plasma chamber; an electromagnet configure to apply a magnetic field to the plasma; and a pulse current generator configured to provide a pulse current to the electromagnet, wherein each period of the pulse current includes a first section and a second section subsequent to the first section, and the pulse current generator is further configured to: provide, at the first section, the pulse current to the electromagnet in a first direction to generate the magnetic field, and provide, at the second section, the pulse current to the electromagnet in a second direction opposite to the first direction to reduce intensity of the magnetic field generated at the first section.