公开(公告)号：US20240012726A1

公开(公告)日：2024-01-11

申请号：US18218893

申请日：2023-07-06

申请人： SAMSUNG ELECTRONICS Co., LTD.

发明人： Helik Kanti THACKER ,  Adrita BARARI ,  Akhilesh Sudhir PATANKAR ,  Deokgu YOON ,  Damini Damini ,  Keerthi Kiran JAGANNATHACHAR ,  Paulami DAS ,  Sairam JUJJARAPU ,  Sudhanshu GUPTA

IPC分类号： G06F11/22 ,  G06N3/04 ,  G06N3/092

CPC分类号： G06F11/2263 ,  G06N3/04 ,  G06N3/092

摘要： A method for repairing a memory element in a memory device by an electronic device includes configuring a memory element as a graph with a vertex and an edge, a node associated with the memory element being encoded with information related to a fault, determining, from the graph, a repair policy using a probability distribution over one or more of a faulty line and a non-faulty line as predicted by a graph neural network (GNN) based on a final node feature value from message passing stages of the GNN, and determining a value of a state using a probability of the memory element being repaired from a particular state based on a global mean of all the final node feature values predicted by the GNN.