公开(公告)号：US20210014438A1

公开(公告)日：2021-01-14

申请号：US16661009

申请日：2019-10-23

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Dajiang YANG ,  Sergey VELICHKO ,  Bartosz Piotr BANACHOWICZ ,  Tomas GEURTS ,  Muhammad Maksudur RAHMAN

IPC: H04N5/355 ,  H01L27/146

Abstract: An image sensor may include an array of image sensor pixels. Each pixel in the array may be a global shutter pixel having a first charge storage node configured to capture scenery information and a second charge storage node configured to capture background information generated as a result of parasitic light and dark noise signals. The first and/or second charge storage nodes may each be provided with an overflow charge storage to provide high dynamic range (HDR) functionality. The background information may be subtracted from the scenery information to cancel out the desired background signal contribution and to obtain an HDR signal with high global shutter efficiency. The charge storage nodes may be implemented as storage diode or storage gate devices. The pixels may be backside illuminated pixels with optical diffracting structures and multiple microlenses formed at the backside to distribute light equally between the two charge storage nodes.

公开(公告)号：US20220086375A1

公开(公告)日：2022-03-17

申请号：US17456982

申请日：2021-11-30

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Dajiang YANG ,  Sergey VELICHKO ,  Bartosz Piotr BANACHOWICZ ,  Tomas GEURTS ,  Muhammad Maksudur RAHMAN

IPC: H04N5/355 ,  H01L27/146

Abstract: An image sensor may include an array of image sensor pixels. Each pixel in the array may be a global shutter pixel having a first charge storage node configured to capture scenery information and a second charge storage node configured to capture background information generated as a result of parasitic light and dark noise signals. The first and/or second charge storage nodes may each be provided with an overflow charge storage to provide high dynamic range (HDR) functionality. The background information may be subtracted from the scenery information to cancel out the desired background signal contribution and to obtain an HDR signal with high global shutter efficiency. The charge storage nodes may be implemented as storage diode or storage gate devices. The pixels may be backside illuminated pixels with optical diffracting structures and multiple microlenses formed at the backside to distribute light equally between the two charge storage nodes.