公开(公告)号：US20250078730A1

公开(公告)日：2025-03-06

申请号：US18574597

申请日：2023-07-18

Applicant: SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

Inventor： Soo Yeon LEE ,  JiMin KANG

IPC: G09G3/32

Abstract: The present invention relates to a micro LED driving circuit including a double gate transistor, and includes a PWM circuitry for controlling the emission time of the micro LED; and a CCG circuitry that controls a constant current to be supplied while the micro LED emits light based on the PWM data voltage.

公开(公告)号：US20240405083A1

公开(公告)日：2024-12-05

申请号：US18696151

申请日：2023-06-08

Applicant: SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

Inventor： Soo Yeon LEE ,  Jin Kyu LEE

IPC: H01L29/417 ,  H01L29/66 ,  H01L29/786

Abstract: The present invention relates to a high-mobility driving element and a method for manufacturing same, the high-mobility driving element comprising: a substrate; an insulating film disposed on the substrate; a channel layer disposed on at least a partial region of the insulating film and including a metal oxide; a source electrode and a drain electrode connected to the channel layer and disposed on the insulating film and either side of the channel layer to face each other; and a protective layer covering all of the channel layer, the source electrode, and the drain electrode, wherein the channel layer comprises a plurality of fluorinated regions in at least a partial region between the source electrode and the drain electrode.

公开(公告)号：US20240429249A1

公开(公告)日：2024-12-26

申请号：US18693428

申请日：2023-06-08

Applicant: SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

Inventor： Soo Yeon LEE ,  Jin Kyu LEE

IPC: H01L27/12 ,  H01L29/417 ,  H01L29/49 ,  H01L29/66

Abstract: The present invention relates to a driving device and a method for manufacturing same, the driving device comprising: a substrate; an insulating layer positioned on the substrate; a channel layer positioned on at least a portion of the insulating layer and including a metal oxide; and a source electrode and a drain electrode which are connected to the channel layer and positioned on the insulating layer to face each other on both sides of the channel layer, wherein the insulating layer comprises: a first insulating layer formed directly on the substrate; and a second insulating layer formed in the width direction at a certain height at the center of the upper surface of the first insulating layer, wherein the length of the second insulating layer is less than the length of the first insulating layer, stepped portions are formed on both sides of the second insulating layer, which respectively face the source electrode and the drain electrode, the stepped portions are spaced apart from the source electrode and the drain electrode in the longitudinal direction, and steps are formed in the channel layer due to the stepped portions.