公开(公告)号：US09123619B2

公开(公告)日：2015-09-01

申请号：US14098017

申请日：2013-12-05

申请人： SHANGHAI HUALI MICROELECTRONICS CORPORATION

发明人： Zhi Tian ,  QiuMin Jin

IPC分类号： H01L21/00 ,  H01L27/146

CPC分类号： H01L27/14689 ,  H01L27/14609

摘要： The present invention discloses a method for inhibiting the electric crosstalk of back illuminated CMOS image sensor. This invention comprises, two ion implanting layers are implanted at the different area of the backside of the pixel unit after the thickness of the backside of CMOS image sensor is reduced. The ion concentrations implanted into the two layers are controlled to decrease progressively from top to bottom. An electric field is formed from top to bottom inside the epitaxial layer. The said electric field absorbs the incident light which arrives at the substrate region outside of the space charge of the photodiode. It reduces the electron diffuses in different pixels. Consequently, it reduces the electric crosstalk of pixels, improves the manufacture process and improve the image quality of the of CMOS image sensor.

摘要翻译： 本发明公开了一种抑制背照式CMOS图像传感器的电串扰的方法。 本发明包括：在CMOS图像传感器的背面的厚度减小之后，将两个离子注入层注入到像素单元的背面的不同区域。 控制注入两层的离子浓度从上到下逐渐降低。 在外延层内部从上到下形成电场。 所述电场吸收到达光电二极管的空间电荷之外的衬底区域的入射光。 它可以减少不同像素的电子扩散。 因此，它减少了像素的电串扰，改善了CMOS图像传感器的制造工艺和图像质量。