公开(公告)号：US20200050066A1

公开(公告)日：2020-02-13

申请号：US16322063

申请日：2018-09-13

Applicant: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO.,LTD.

Inventor： Xiaobo HU

IPC: G02F1/1362 ,  G02F1/1335 ,  G02F1/155

Abstract: The present disclosure discloses an opposite substrate including a base substrate and a common electrode layer, wherein the common electrode layer includes a protective layer, a first electrode layer and a second electrode layer sequentially disposed on the base substrate, a material of the protective layer is a transparent insulating material, the first electrode layer is configured to be capable of transmitting visible light and reflecting infrared light, a material of the first electrode layer is Ag, and a material of the second electrode layer is a transparent conductive material. The present disclosure further discloses a preparation method of the opposite substrate as mentioned above and a display device including the opposite substrate as mentioned above. The opposite substrate provided in the present disclosure is disposed with a first electrode layer capable of reflecting infrared light and transmitting visible light therein and is applied to the display device. A problem of the display device can be resolved that a device is overheated due to infrared radiation of an external environment.

公开(公告)号：US20190013334A1

公开(公告)日：2019-01-10

申请号：US15558704

申请日：2017-08-11

Applicant: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Xiaobo HU

IPC: H01L27/12 ,  H01L29/24 ,  H01L29/786 ,  H01L29/66

Abstract: The present disclosure discloses a method for manufacturing an array substrate comprising: forming a gate electrode on a substrate; forming a gate insulating layer on one side of the substrate facing the gate electrode, the gate insulating layer covering the gate electrode; depositing an indium gallium zinc tin oxide layer and an indium gallium zinc oxide layer on one side of the gate insulating layer away from the gate electrode; patterning the indium gallium zinc oxide layer and the indium gallium zinc tin oxide layer by a first yellow light process to form a protective layer and an active layer, the protective layer covering the active layer; depositing a metal layer on one side of the protective layer away from the active layer; and patterning the metal layer and the protective layer by a second yellow light process to form a source electrode, a drain electrode, and a separation region.

公开(公告)号：US20210098495A1

公开(公告)日：2021-04-01

申请号：US16080259

申请日：2018-06-11

Applicant: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Xiaobo HU

IPC: H01L27/12

Abstract: The invention discloses an electrode structure, comprising a copper metal layer formed on a substrate, wherein the copper metal layer doped with a first metal ion within a first depth from upper surface, the first metal ion and the copper grain forming a copper alloy layer the first depth being less than thickness of the copper metal layer, and the first metal ion being a metal ion having corrosion resistance and an ionic radius smaller than a gap between copper grains. The corresponding manufacturing method comprises: providing a substrate and forming a copper metal layer on the substrate by deposition; applying an ion implantation process to implant a first metal ion to within a first depth of the copper metal layer; applying a vacuum annealing process to anneal the copper metal layer for the first metal ion and the copper grain to form the copper alloy layer.