公开(公告)号：US20120267684A1

公开(公告)日：2012-10-25

申请号：US13538583

申请日：2012-06-29

申请人： SHINICHI TAMARI ,  MITSUHIRO NAKAMURA ,  KOJI WAKIZONO ,  TOMOYA NISHIDA ,  YUJI IBUSUKI

发明人： SHINICHI TAMARI ,  MITSUHIRO NAKAMURA ,  KOJI WAKIZONO ,  TOMOYA NISHIDA ,  YUJI IBUSUKI

IPC分类号： H01L27/085 ,  H01L21/8232

CPC分类号： H01L29/7787 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/098 ,  H01L29/205 ,  H01L29/66462

摘要： A semiconductor device includes a compound semiconductor substrate; a first conductivity type-channel field-effect transistor region formed on the compound semiconductor substrate, and that includes a first channel layer; a first conductivity type first barrier layer that forms a heterojunction with the first channel layer, and supplies a first conductivity type charge to the first channel layer; and a second conductivity type gate region that has a pn junction-type potential barrier against the first conductivity type first barrier layer; and a second conductivity type-channel field-effect transistor region formed on the compound semiconductor substrate, and that includes a second conductivity type second channel layer, and a first conductivity type gate region that has a pn junction-type potential barrier against the second conductivity type second channel layer.

摘要翻译： 半导体器件包括化合物半导体衬底; 形成在所述化合物半导体衬底上的第一导电型沟道场效应晶体管区，并且包括第一沟道层; 第一导电型第一阻挡层，与第一沟道层形成异质结，并向第一沟道层提供第一导电型电荷; 以及对所述第一导电型第一阻挡层具有pn结型势垒的第二导电型栅极区; 以及形成在所述化合物半导体衬底上并且包括第二导电类型的第二沟道层的第二导电类型沟道场效应晶体管区域和具有针对所述第二导电性的pn结型势垒的第一导电型栅极区 键入第二通道层。