公开(公告)号：US20220316090A1

公开(公告)日：2022-10-06

申请号：US17693517

申请日：2022-03-14

申请人： SK Siltron Co., LTD.

发明人： Dong Ho KANG ,  Kun Young KIM

IPC分类号： C30B25/10 ,  H01L21/02

摘要： Embodiments provide a method of growing an epitaxial layer on a wafer, the method including steps of (a) introducing at least one wafer into a process chamber, (b) loading the wafer into an area adjacent to a susceptor while supporting the wafer using a lift pin, (c) preheating the wafer, and (d) placing the wafer in a pocket of the susceptor and heating the wafer to deposit an epitaxial layer on the wafer, wherein outputs of first lamps above the susceptor and second lamps under the susceptor in the steps (a) and (b) are set to be different from outputs of the first lamps and the second lamps in the steps (c) and (d).