公开(公告)号：US11891718B2

公开(公告)日：2024-02-06

申请号：US17578573

申请日：2022-01-19

Applicant: SK Siltron Co., LTD.

Inventor： Hyun Ju Hwang ,  Sang Hee Kim ,  Kyung Tae Park

IPC: C30B15/22 ,  C30B29/06 ,  C30B15/10 ,  C30B15/14 ,  C30B15/36

CPC classification number: C30B15/22 ,  C30B15/10 ,  C30B15/14 ,  C30B15/36 ,  C30B29/06

Abstract: Embodiments provide a method of growing a silicon single crystal ingot, the method including growing a silicon single crystal ingot having crystal orientation of (111) using the Czochralski method, measuring a diameter of the silicon single crystal ingot, calculating a length of a facet of the silicon single crystal ingot, calculating a correction formula for a rotation speed of a seed and a correction formula for a pulling speed of the silicon single crystal ingot based on the calculated facet length, and correcting the rotation speed of the seed and the pulling speed of the silicon single crystal ingot based on a result of the calculation.