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公开(公告)号:US20240332331A1
公开(公告)日:2024-10-03
申请号:US18508570
申请日:2023-11-14
申请人: SK hynix Inc.
发明人: Ho Young KWAK
IPC分类号: H01L27/146 , H01L23/538
CPC分类号: H01L27/1463 , H01L23/5384
摘要: Image sensing devices are disclosed. In an embodiment, an image sensing device includes a semiconductor substrate including a first surface and a second surface facing or opposite to the first surface, and structured to include a pixel region in which photoelectric conversion elements are formed to correspond to unit pixels and a pad region that is located outside the pixel region while having an electrode pad, a pixel isolation pattern disposed between the photoelectric conversion elements in the semiconductor substrate, and a pad isolation pattern disposed between the pixel region and the pad region in the semiconductor substrate.
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公开(公告)号:US20220415942A1
公开(公告)日:2022-12-29
申请号:US17829541
申请日:2022-06-01
申请人: SK hynix Inc.
发明人: Hyung June YOON , Ho Young KWAK , Nam Il KIM , Dong Jin LEE , Jae Won LEE , Hoon Moo CHOI
IPC分类号: H01L27/146
摘要: An image sensing device is provided to include: a substrate having a first surface on which light is incident and a second surface facing the first surface; a plurality of detection structures, each comprising a control node configured to exhibit a conductivity type and generate a potential gradient in the substrate, and a detection node configured to capture photocharge which is generated in response to incident light and migrates in response to the potential gradient; and a first well area disposed to abut the control nodes of the plurality of detection structures and containing an impurity with a different conductivity type from the conductivity type of the control nodes.
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公开(公告)号:US20220278163A1
公开(公告)日:2022-09-01
申请号:US17525207
申请日:2021-11-12
申请人: SK hynix Inc.
发明人: Ho Young KWAK
IPC分类号: H01L27/146
摘要: An image sensing device includes a first substrate layer including first conductive impurities and structured to produce photocharges based on the incident light and capture the photocharges using a voltage difference induced in response to a demodulation control signal; a second substrate layer including second conductive impurities having characteristics opposite to those of the first conductive impurities, and structured to be bonded to the first substrate layer; and a depletion layer formed between the first substrate layer and the second substrate layer.
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