公开(公告)号：US20230231027A1

公开(公告)日：2023-07-20

申请号：US18148815

申请日：2022-12-30

申请人： SK hynix Inc. ,  Chungbuk National University Industry-Academic Cooperation Foundation ,  Korea University Research and Business Foundation, Sejong Campus ,  Korea Institute of Energy Research

发明人： Ka-Hyun KIM ,  Hyun Seok LEE ,  Jae Woo LEE ,  Joon-Ho OH

IPC分类号： H01L29/45 ,  H01L21/285

CPC分类号： H01L29/45 ,  H01L21/28518

摘要： Disclosed are a method of forming a contact structure, a method of fabricating a semiconductor device, a contact structure, and a semiconductor device including the same. A method of forming a contact structure may comprise forming a porous silicon layer on a substrate by using an epitaxy process, forming a dielectric layer on the porous silicon layer, forming a metal layer on the dielectric layer, forming a silicide member having a three-dimensional structure in the porous silicon layer by diffusing metal atoms of the metal layer into the porous silicon layer through the dielectric layer and reacting the diffused metal atoms with the porous silicon layer in a heat treatment process, removing the metal layer and the dielectric layer, and forming a conductive layer in contact with the silicide member.