公开(公告)号：US20180174990A1

公开(公告)日：2018-06-21

申请号：US15629234

申请日：2017-06-21

申请人： SMART MODULAR TECHNOLOGIES LX S.A.R.L ,  Bum Wook PARK ,  Hyun JUNG

发明人： Bum Wook PARK ,  Hyun JUNG

IPC分类号： H01L23/00

CPC分类号： H01L24/11 ,  H01L2224/11462 ,  H01L2224/1401 ,  H01L2224/14517 ,  H01L2924/01029 ,  H01L2924/014

摘要： The present invention provides a method for forming bumps of a semiconductor package to suppress a final height difference between main bumps and support bumps that is caused by a height difference between areas of an underlying layer when viewed on a cross-section. The method may include forming first seed layer patterns and second seed layer patterns which are disposed in the areas and are separated from each other, over the underlying layer having the height difference. The method may include forming the main bumps and the support bumps of which final heights are the same when viewed on the cross-section in the areas, by performing electroplating through using, as electrodes, the first seed layer patterns and the second seed layer patterns which are disposed in the areas and are separated from each other, under different conditions in the areas.