公开(公告)号：US10692913B2

公开(公告)日：2020-06-23

申请号：US15737133

申请日：2016-05-30

Applicant: SONY CORPORATION

Inventor： Masaki Murata ,  Yasuharu Ujiie ,  Shintarou Hirata ,  Yuya Kumagai

IPC: H01L27/146 ,  H01L27/30 ,  H01L51/42 ,  H01L51/00

Abstract: In an image pickup element or a photoelectric conversion element, at least an anode 21, a carrier blocking layer 22, an organic photoelectric conversion layer 23, and a cathode 25 are laminated in order, and the carrier blocking layer 22 includes a material having the following structural formula (1), and part of an organic semiconductor material constituting the organic photoelectric conversion layer 23.

公开(公告)号：US11211422B2

公开(公告)日：2021-12-28

申请号：US16086248

申请日：2017-03-14

Applicant: SONY CORPORATION

Inventor： Hideaki Mogi ,  Yohei Hirose ,  Shintarou Hirata ,  Yuya Kumagai ,  Tetsuji Yamaguchi ,  Masaki Murata ,  Yasuharu Ujiie

IPC: H01L27/146 ,  H04N5/369

Abstract: Provided is a solid-state image sensor of a vertical spectral diffraction type in which a plurality of photoelectric conversion units are stacked in a region of each pixel, the solid-state image sensor includes a first photoelectric conversion module that includes a first photoelectric conversion unit that to performs photoelectric conversion on light in a first wavelength range of incident light, a first upper electrode and a first lower electrode with the first photoelectric conversion unit between the first upper electrode and the first lower electrode, and a first spectral correction unit between the first upper electrode and the first lower electrode stacked on the first photoelectric conversion unit and a second photoelectric conversion unit that performs photoelectric conversion on light in a second wavelength range of light that has passed through the first photoelectric conversion module, the second wavelength range is different from the first wavelength range.

公开(公告)号：US10886335B2

公开(公告)日：2021-01-05

申请号：US16349759

申请日：2017-11-17

Applicant: SONY CORPORATION

Inventor： Yasuharu Ujiie ,  Masakazu Muroyama ,  Masashi Bando ,  Masaki Murata ,  Hideyuki Kumita ,  Sachiko Sakaigawa ,  Shintarou Hirata ,  Yuya Kumagai ,  Yu Kato

IPC: H01L27/30 ,  H01L51/00 ,  H01L51/42 ,  H01L51/44

Abstract: There is provided an imaging device including an upper electrode; a lower electrode; a photoelectric conversion layer disposed between the upper electrode and the lower electrode; and a first organic semiconductor material including an indolocarbazole derivative and disposed between the upper electrode and the lower electrode. Further, there is provided an electronic apparatus including an imaging device that includes an upper electrode; a lower electrode; a photoelectric conversion layer disposed between the upper electrode and the lower electrode; and a first organic semiconductor material including an indolocarbazole derivative and disposed between the upper electrode and the lower electrode.

公开(公告)号：US10566548B2

公开(公告)日：2020-02-18

申请号：US15572609

申请日：2016-04-19

Applicant: SONY CORPORATION

Inventor： Yasuharu Ujiie ,  Masaki Murata ,  Yuya Kumagai ,  Hideaki Mogi ,  Shintarou Hirata

IPC: H01B1/12 ,  H01L51/00 ,  H01L51/42 ,  H01L27/30 ,  H01L51/44

Abstract: An image sensor includes at least a first electrode, a second electrode, an organic photoelectric conversion layer, and a carrier blocking layer. The carrier blocking layer is formed of a material having the following structural formula (1), and has a thickness of from 5×10−9 to 1.5×10−7 m: