公开(公告)号：US11711931B2

公开(公告)日：2023-07-25

申请号：US17445645

申请日：2021-08-23

申请人： SONY GROUP CORPORATION

发明人： Yukio Kaneda ,  Ryoji Arai ,  Toshiki Moriwaki

IPC分类号： H10K30/80 ,  G01T1/36 ,  H10K39/10 ,  H10K39/32

CPC分类号： H10K30/80 ,  G01T1/366 ,  H10K39/10 ,  H10K39/32

摘要： The present technology relates to a photoelectric conversion element, a measuring method of the same, a solid-state imaging device, an electronic device, and a solar cell capable of further improving a quantum efficiency in a photoelectric conversion element using a photoelectric conversion layer including an organic semiconductor material. The photoelectric conversion element includes two electrodes forming a positive electrode (11) and a negative electrode (14), at least one charge blocking layer (13, 15) arranged between the two electrodes, and a photoelectric conversion layer (12) arranged between the two electrodes. The at least one charge blocking layer is an electron blocking layer (13) or a hole blocking layer (15), and a potential of the charge blocking layer is bent. The present technology is applied to, for example, a solid-state imaging device, a solar cell, and the like having a photoelectric conversion element.