Abstract:
A method of controlling a start-up sequence of a DC/DC Buck converter, the method being characterised by the steps of continuously comparing the Buck converter's output voltage with an internal reference voltage and continuously monitoring for a Buck converter start-up signal, wherein if the output voltage is greater than the reference voltage when a Buck converter start-up signal is detected, switching off the Buck converter and discharging an output capacitor of the Buck converter through a pull-down unit until the output voltage substantially equals the internal reference voltage and then restarting the Buck converter.
Abstract:
A method of controlling a start-up sequence of a DC/DC Buck converter includes continuously comparing the Buck converter's output voltage with an internal reference voltage and continuously monitoring for a Buck converter start-up signal. If the output voltage is greater than the reference voltage when a Buck converter start-up signal is detected, the Buck converter is switched off and an output capacitor of the Buck converter is discharged through a pull-down unit until the output voltage substantially equals the internal reference voltage and then restarting the Buck converter.
Abstract:
A pulse width modulation controller (PWM) is disclosed which has a MOSFET (15) responsive to the error voltage (Verror) signal from the PWM amplifier (17) to detect a transient condition without delay ΔTd. The MOSFET drain generates and applies a detection signal (S) to a delaying circuit (D). The delaying circuit (D) is responsive to the transient detection signal (S) to asynchronously output two latch signals (S1) and (S2) which on application to respective latch circuits (L1, L2) cause a change in conduction state of PMOS (8) and NMOS (9). This arrangement reduces voltage undershoot.
Abstract:
A pulse width modulation controller (PWM) is disclosed which has a MOSFET (15) responsive to the error voltage (Verror) signal from the PWM amplifier (17) to detect a transient condition without delay ΔTd. The MOSFET drain generates and applies a detection signal (S) to a delaying circuit (D). The delaying circuit (D) is responsive to the transient detection signal (S) to asynchronously output two latch signals (S1) and (S2) which on application to respective latch circuits (L1, L2) cause a change in conduction state of PMOS (8) and NMOS (9). This arrangement reduces voltage undershoot.