公开(公告)号：US20240105551A1

公开(公告)日：2024-03-28

申请号：US17936075

申请日：2022-09-28

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Hyun-kyu Lee ,  Ji-seon Lee ,  Bum-ryul Maeng

IPC: H01L23/473 ,  H01L21/48

CPC classification number: H01L23/473 ,  H01L21/4871

Abstract: A semiconductor device includes a substrate. A semiconductor die is disposed over the substrate. An encapsulant is deposited over the substrate and semiconductor die. A first trench is formed in the encapsulant over the semiconductor die. A conductive layer is formed over the encapsulant and into the first trench.