公开(公告)号：US20240379511A1

公开(公告)日：2024-11-14

申请号：US18314626

申请日：2023-05-09

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： Chunhe Quan ,  JinYoung Lee ,  Hyungwoo Park

IPC: H01L23/498 ,  H01L21/48 ,  H01Q1/22

Abstract: A semiconductor device has a substrate and a first electrical interconnect structure formed over a first surface of the substrate. A second electrical interconnect structure is formed over a second surface of the substrate. An electrical component is disposed over the first surface of the substrate or over the second surface of the substrate. A first antenna is formed over the first electrical interconnect structure. A second antenna is formed over the second electrical interconnect structure. The first electrical interconnect structure has an insulating material formed over the first surface of the substrate, and a conductive via formed through the insulating material. Alternatively, the first electrical interconnect structure has an insulating layer formed over the first surface of the substrate, a conductive layer formed over the insulating layer, and a conductive via formed through the insulating layer and conductive layer.