公开(公告)号：US20160182780A1

公开(公告)日：2016-06-23

申请号：US14838456

申请日：2015-08-28

Applicant: STMICROELECTRONICS (GRENOBLE 2) SAS

Inventor： Flavien Hirigoyen ,  Emilie Huss

IPC: H04N5/225

CPC classification number: H04N5/2253 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14643 ,  H04N5/2254

Abstract: An image sensor pixel may include an array of four photosites, a transverse isolator wall separating the array in two rows of two photosites, and a longitudinal isolator wall separating the array in two columns of two photosites. Both ends of the longitudinal wall may be set back relative to the edges of the array. First and second conversion nodes may be arranged in the spaces between the longitudinal wall and the edges of the matrix. Each conversion node may be common to two adjacent photosites, and an independent transfer gate may be between each photosite and the corresponding conversion node.

Abstract translation: 图像传感器像素可以包括四个光斑的阵列，将阵列分成两行两个光斑的横向隔离壁，以及将阵列分成两列两个光斑的纵向隔离壁。 纵向壁的两端可以相对于阵列的边缘回退。 第一和第二转换节点可以布置在纵向壁和矩阵的边缘之间的空间中。 每个转换节点可以是两个相邻光斑的公共的，并且独立的传输门可以在每个光子和相应的转换节点之间。

公开(公告)号：US09521304B2

公开(公告)日：2016-12-13

申请号：US14838456

申请日：2015-08-28

Applicant: STMICROELECTRONICS (GRENOBLE 2) SAS

Inventor： Flavien Hirigoyen ,  Emilie Huss

IPC: H04N5/225 ,  H01L27/146

CPC classification number: H04N5/2253 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14643 ,  H04N5/2254

Abstract: An image sensor pixel may include an array of four photosites, a transverse isolator wall separating the array in two rows of two photosites, and a longitudinal isolator wall separating the array in two columns of two photosites. Both ends of the longitudinal wall may be set back relative to the edges of the array. First and second conversion nodes may be arranged in the spaces between the longitudinal wall and the edges of the matrix. Each conversion node may be common to two adjacent photosites, and an independent transfer gate may be between each photosite and the corresponding conversion node.

Abstract translation: 图像传感器像素可以包括四个光斑的阵列，将阵列分成两行两个光斑的横向隔离壁，以及将阵列分成两列两个光斑的纵向隔离壁。 纵向壁的两端可以相对于阵列的边缘回退。 第一和第二转换节点可以布置在纵向壁和矩阵的边缘之间的空间中。 每个转换节点可以是两个相邻光斑的公共的，并且独立的传输门可以在每个光子和相应的转换节点之间。

公开(公告)号：US09595552B2

公开(公告)日：2017-03-14

申请号：US14642100

申请日：2015-03-09

Applicant: STMicroelectronics (Grenoble 2) SAS

Inventor： Flavien Hirigoyen ,  Emilie Huss

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14603 ,  H01L27/1463 ,  H01L27/14683 ,  H01L27/14685

Abstract: A method of simultaneously manufacturing First and second pixels respectively shielded on a first and on a second side are simultaneously manufactured using a process wherein a first insulator is deposited on an active area. A first metal level is deposited and defined, with a first mask, to form a shield on the first side of the first pixel and on the second side of the second pixel, and a line opposite to the shield. A second insulator is deposited, and via openings therein are defined, with a second mask. An overlying second metal level is deposited and defined, with a third mask, to form two connection areas covering the via openings on each side of the first and second pixels. The second and third masks are identical for the first and second pixels.

Abstract translation: 使用其中第一绝缘体沉积在有源区上的方法同时制造同时制造分别屏蔽在第一和第二侧上的第一和第二像素的方法。 用第一掩模沉积和限定第一金属层，以在第一像素的第一侧和第二像素的第二侧上形成屏蔽，并且与屏蔽件相对的线。 沉积第二绝缘体，并且通过第二掩模限定其中的通孔开口。 用第三掩模沉积和限定覆盖的第二金属层，以形成覆盖第一和第二像素的每一侧上的通孔开口的两个连接区域。 第二和第三掩模对于第一和第二像素是相同的。

公开(公告)号：US20170033151A1

公开(公告)日：2017-02-02

申请号：US15290137

申请日：2016-10-11

Applicant: STMicroelectronics (Grenoble 2) SAS

Inventor： Flavien Hirigoyen ,  Emilie Huss

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14603 ,  H01L27/1463 ,  H01L27/14683 ,  H01L27/14685

Abstract: A method of simultaneously manufacturing First and second pixels respectively shielded on a first and on a second side are simultaneously manufactured using a process wherein a first insulator is deposited on an active area. A first metal level is deposited and defined, with a first mask, to form a shield on the first side of the first pixel and on the second side of the second pixel, and a line opposite to the shield. A second insulator is deposited, and via openings therein are defined, with a second mask. An overlying second metal level is deposited and defined, with a third mask, to form two connection areas covering the via openings on each side of the first and second pixels. The second and third masks are identical for the first and second pixels.

Abstract translation: 使用其中第一绝缘体沉积在有源区上的方法同时制造同时制造分别屏蔽在第一和第二侧上的第一和第二像素的方法。 用第一掩模沉积和限定第一金属层，以在第一像素的第一侧和第二像素的第二侧上形成屏蔽，并且与屏蔽件相对的线。 沉积第二绝缘体，并且通过第二掩模限定其中的通孔开口。 用第三掩模沉积和限定覆盖的第二金属层，以形成覆盖第一和第二像素的每一侧上的通孔开口的两个连接区域。 第二和第三掩模对于第一和第二像素是相同的。

公开(公告)号：US09865636B2

公开(公告)日：2018-01-09

申请号：US15290137

申请日：2016-10-11

Applicant: STMicroelectronics (Grenoble 2) SAS

Inventor： Flavien Hirigoyen ,  Emilie Huss

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14603 ,  H01L27/1463 ,  H01L27/14683 ,  H01L27/14685

Abstract: A method of simultaneously manufacturing First and second pixels respectively shielded on a first and on a second side are simultaneously manufactured using a process wherein a first insulator is deposited on an active area. A first metal level is deposited and defined, with a first mask, to form a shield on the first side of the first pixel and on the second side of the second pixel, and a line opposite to the shield. A second insulator is deposited, and via openings therein are defined, with a second mask. An overlying second metal level is deposited and defined, with a third mask, to form two connection areas covering the via openings on each side of the first and second pixels. The second and third masks are identical for the first and second pixels.

公开(公告)号：US20150295003A1

公开(公告)日：2015-10-15

申请号：US14642100

申请日：2015-03-09

Applicant: STMICROELECTRONICS (GRENOBLE 2) SAS

Inventor： Flavien Hirigoyen ,  Emilie Huss

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14603 ,  H01L27/1463 ,  H01L27/14683 ,  H01L27/14685

Abstract: A method of simultaneously manufacturing First and second pixels respectively shielded on a first and on a second side are simultaneously manufactured using a process wherein a first insulator is deposited on an active area. A first metal level is deposited and defined, with a first mask, to form a shield on the first side of the first pixel and on the second side of the second pixel, and a line opposite to the shield. A second insulator is deposited, and via openings therein are defined, with a second mask. An overlying second metal level is deposited and defined, with a third mask, to form two connection areas covering the via openings on each side of the first and second pixels. The second and third masks are identical for the first and second pixels.

Abstract translation: 使用其中第一绝缘体沉积在有源区上的方法同时制造同时制造分别屏蔽在第一和第二侧上的第一和第二像素的方法。 用第一掩模沉积和限定第一金属层，以在第一像素的第一侧和第二像素的第二侧上形成屏蔽，并且与屏蔽件相对的线。 沉积第二绝缘体，并且通过第二掩模限定其中的通孔开口。 用第三掩模沉积和限定覆盖的第二金属层，以形成覆盖第一和第二像素的每一侧上的通孔开口的两个连接区域。 第二和第三掩模对于第一和第二像素是相同的。