公开(公告)号：US20140184278A1

公开(公告)日：2014-07-03

申请号：US14073494

申请日：2013-11-06

Applicant: STMICROELECTRONICS (SHENZHEN) R&D CO. LTD.

Inventor： Ni ZENG

IPC: H03K3/012

CPC classification number: H03K17/00 ,  H03K17/06 ,  H03K2017/066 ,  H03K2217/0036 ,  H03K2217/0063

Abstract: A driver circuit for driving a power transistor includes a converter having a first transistor and a second transistor coupled in series between a supply node and a reference node. The converter is configured to receive a first signal and in response thereto generate a second signal for selectively controlling status of the power transistor. The ratio of a first leakage current of the first transistor to a second leakage current of the second transistor is used in the generation of the second signal which is applied to the control terminal of a transistor switch that is selectively actuated to turn off the power transistor.

Abstract translation: 用于驱动功率晶体管的驱动电路包括具有串联耦合在供电节点和参考节点之间的第一晶体管和第二晶体管的转换器。 转换器被配置为接收第一信号，并响应于此产生用于选择性地控制功率晶体管状态的第二信号。 第一晶体管的第一泄漏电流与第二晶体管的第二漏电流之比用于产生施加到晶体管开关的控制端的第二信号，晶体管开关被选择性地致动以关断功率晶体管 。