公开(公告)号：US20230021534A1

公开(公告)日：2023-01-26

申请号：US17858797

申请日：2022-07-06

申请人： STMICROELECTRONICS (TOURS) SAS

发明人： Olivier ORY ,  Philippe RABIER

IPC分类号： H01L21/84 ,  H01L21/768 ,  H01L21/762 ,  H01L23/528 ,  H01L21/304 ,  H01L21/66

摘要： The present description concerns an electronic die manufacturing method comprising: a) the deposition of an electrically-insulating resin layer on the side of a first surface of a semiconductor substrate, inside and on top of which have been previously formed a plurality of integrated circuits, the semiconductor substrate supporting on a second surface, opposite to the first surface, contacting pads; and b) the forming, on the side of the second surface of the semiconductor substrate, of first trenches, electrically separating the integrated circuits from one another, the first trenches vertically extending in the semiconductor substrate and emerging into or on top of the resin layer.