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公开(公告)号:US10147796B1
公开(公告)日:2018-12-04
申请号:US15606778
申请日:2017-05-26
Inventor: Patrik Vacula , Milos Vacula , Vlastimil Kote , Adam Kubacak , Milan Lzicar
IPC: H01L29/423 , H01L27/088 , H01L29/06 , H01L29/40 , H01L29/66 , H01L29/778
Abstract: The present disclosure is directed to a plurality of waffle gate parallel transistors having a shared gate on a surface of a semiconductor substrate. The shared gate has connected channels that form a plurality of squares, lines of each of the squares over the perimeter of a respective source or drain region of the plurality of waffle gate parallel transistors. The shared gate includes squares of a first size and shape and a second size and shape. The squares having the first size and shape are each over a respective source region and the squares having the second size and shape are each over a respective drain region. Each of the squares having a first size and shape share at least one side with one of the squares having the second size and shape.
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公开(公告)号:US20180342594A1
公开(公告)日:2018-11-29
申请号:US15606778
申请日:2017-05-26
Inventor: Patrik Vacula , Milos Vacula , Vlastimil Kote , Adam Kubacak , Milan Lzicar
IPC: H01L29/423 , H01L27/088 , H01L29/06 , H01L29/40 , H01L29/66 , H01L29/778
Abstract: The present disclosure is directed to a plurality of waffle gate parallel transistors having a shared gate on a surface of a semiconductor substrate. The shared gate has connected channels that form a plurality of squares, lines of each of the squares over the perimeter of a respective source or drain region of the plurality of waffle gate parallel transistors. The shared gate includes squares of a first size and shape and a second size and shape. The squares having the first size and shape are each over a respective source region and the squares having the second size and shape are each over a respective drain region. Each of the squares having a first size and shape share at least one side with one of the squares having the second size and shape.
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