公开(公告)号：US20250118613A1

公开(公告)日：2025-04-10

申请号：US18892003

申请日：2024-09-20

Applicant: STMICROELECTRONICS INTERNATIONAL N.V.

Inventor： Paolo COLPANI ,  Luisito LIVELLARA

IPC: H01L23/31 ,  H01L21/02 ,  H01L23/29 ,  H01L29/20 ,  H01L29/66 ,  H01L29/778

Abstract: The present disclosure generally provides for a high electron mobility transistor or HEMT. An example HEMT includes a first semiconductor layer; a gate arranged on a first surface of the first semiconductor layer; a first passivation layer comprising at least a sub-layer of a first dielectric material on the sides of the gate, the first passivation layer further extending over a first portion of the surface of the first semiconductor layer; and a second passivation layer, distinct from the first passivation layer, comprising at least a sub-layer of the same first dielectric material on a second portion of the surface of the first semiconductor layer next to the first passivation layer.