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1.
公开(公告)号:US20210020555A1
公开(公告)日:2021-01-21
申请号:US16927776
申请日:2020-07-13
Inventor: Laurent HERARD , David PARKER , David GANI
IPC: H01L23/498 , H01L21/48
Abstract: The present disclosure provides devices and methods in which a semiconductor chip has a reduced size and thickness. The device is manufactured by utilizing a sacrificial or dummy silicon wafer. A recess is formed in the dummy silicon wafer where the semiconductor chip is mounted in the recess. The space between the dummy silicon wafer and the chip is filled with underfill material. The dummy silicon wafer and the backside of the chip are etched using any suitable etching process until the dummy silicon wafer is removed, and the thickness of the chip is reduced. With this process, the overall thickness of the semiconductor chip can be thinned down to less than 50 μm in some embodiments. The ultra-thin semiconductor chip can be incorporated in manufacturing flexible/rollable display panels, foldable mobile devices, wearable displays, or any other electrical or electronic devices.
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公开(公告)号:US20230223358A1
公开(公告)日:2023-07-13
申请号:US18094069
申请日:2023-01-06
Inventor: Carlos Augusto SUAREZ SEGOVIA , David PARKER , Chantal TROUILLER , Alexandre MALHERBE , Stephan NIEL
CPC classification number: H01L23/562 , H01L23/585 , H01L21/78
Abstract: Integrated circuits are supported by a semiconductor substrate wafer. Each integrated circuit includes an electrically active area. A thermally conductive protective structure is formed around the active areas of the various integrated circuits along scribe paths. The protective structure is located between the electrically active areas of the integrated circuits and a laser ablation area of the scribe paths. Separation of the integrated circuits is performed by scribing the semiconductor substrate wafer along the scribe paths. The process for scribing includes performing a laser ablation in the laser ablation area and then performing one of an etching or a physical scribing.
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