公开(公告)号：US20040052148A1

公开(公告)日：2004-03-18

申请号：US10449921

申请日：2003-05-30

Applicant: STMICROELECTRONICS S.A.

Inventor： Philippe Gendrier ,  Daniel Caspar

IPC: G11C008/02

CPC classification number: G11C17/16

Abstract: A non-volatile memory device is provided that can be irreversibly programmed electrically. The device includes a memory plane formed from a matrix of memory cells, with each of the memory cells including an access transistor and a capacitor. The memory cell matrix includes first groups of memory cells laid out in a first direction and second groups of memory cells laid out in a second direction. Each first group includes memory cells whose transistor gates are connected together by a first metallization, whose upper capacitor electrodes are connected together by a second metallization, and whose transistor sources are not connected together. Each second group includes memory cells whose transistor sources are connected together by a third metallization, whose transistor gates are not connected together, and whose upper capacitor electrodes are not connected together. The device also includes control means capable of applying chosen voltages to the first, second, and third metallizations so as to selectively program a single one of the memory cells by damaging its dielectric without programming the other memory cells and without damaging the transistors of the memory cells.

Abstract translation: 提供了可以不可逆地编程的非易失性存储器件。 该器件包括由存储器单元矩阵形成的存储器平面，每个存储器单元包括存取晶体管和电容器。 存储单元矩阵包括以第一方向布置的第一组存储器单元和沿第二方向布置的第二组存储单元。 每个第一组包括其晶体管栅极通过第一金属化连接在一起的存储单元，其上电容器电极通过第二金属化连接在一起，并且其晶体管源不连接在一起。 每个第二组包括其晶体管源通过第三金属化连接在一起的存储单元，其晶体管栅极未连接在一起，并且其上电容器电极未连接在一起。 该装置还包括能够将选择的电压施加到第一，第二和第三金属化的控制装置，以便通过损坏其电介质来选择性地编程单个存储器单元，而不对其它存储器单元进行编程，而不会损坏存储器的晶体管 细胞。