公开(公告)号：US11626379B2

公开(公告)日：2023-04-11

申请号：US17199340

申请日：2021-03-11

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Roberto Tiziani ,  Guendalina Catalano

IPC: H01L23/00 ,  H01L21/56 ,  H01L23/495

Abstract: A method comprises molding laser direct structuring material onto at least one semiconductor die, forming resist material on the laser direct structuring material, producing mutually aligned patterns of electrically-conductive formations in the laser direct structuring material and etched-out portions of the resist material having lateral walls sidewise of said electrically-conductive formations via laser beam energy, and forming electrically-conductive material at said etched-out portions of the resist material, the electrically-conductive material having lateral confinement surfaces at said lateral walls of said etched-out portions of the resist material.

公开(公告)号：US11887959B2

公开(公告)日：2024-01-30

申请号：US17549515

申请日：2021-12-13

Applicant: STMicroelectronics S.r.l.

Inventor： Michele Derai ,  Guendalina Catalano

IPC: H01L23/495 ,  H01L23/00

CPC classification number: H01L24/24 ,  H01L23/4951 ,  H01L23/49513 ,  H01L24/19 ,  H01L24/25 ,  H01L2224/2405 ,  H01L2224/24246 ,  H01L2224/2505 ,  H01L2224/25175 ,  H01L2924/182

Abstract: A semiconductor device includes a support substrate with leads arranged therearound, a semiconductor die on the support substrate, and a layer of laser-activatable material molded onto the die and the leads. The leads include proximal portions facing towards the support substrate and distal portions facing away from the support substrate. The semiconductor die includes bonding pads at a front surface thereof which is opposed to the support substrate, and is arranged onto the proximal portions of the leads. The semiconductor device has electrically-conductive formations laser-structured at selected locations of the laser-activatable material. The electrically-conductive formations include first vias extending between the bonding pads and a front surface of the laser-activatable material, second vias extending between the distal portions of the leads and the front surface of the laser-activatable material, and lines extending at the front surface of the laser-activatable material and connecting selected first vias to selected second vias.