公开(公告)号：US20140252524A1

公开(公告)日：2014-09-11

申请号：US14281529

申请日：2014-05-19

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Delfo Nunziato SANFILIPPO ,  Piero Giorgio FALLICA

IPC: H01L31/107 ,  H01L25/16 ,  H01L27/146

CPC classification number: H01L31/107 ,  H01L25/167 ,  H01L27/14629 ,  H01L27/14643 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An embodiment of array of Geiger-mode avalanche photodiodes, wherein each photodiode is formed by a body of semiconductor material, having a first conductivity type and housing an anode region, of a second conductivity type, facing a top surface of the body, a cathode-contact region, having the first conductivity type and a higher doping level than the body, facing a bottom surface of the body, an insulation region extending through the body and insulating an active area from the rest of the body, the active area housing the anode region and the cathode-contact region. The insulation region is formed by a first mirror region of polycrystalline silicon, a second mirror region of metal material, and a channel-stopper region of dielectric material, surrounding the first and second mirror regions.

Abstract translation: Geiger型雪崩光电二极管阵列的一个实施例，其中每个光电二极管由半导体材料体形成，具有第一导电类型并且容纳阳极区，第二导电类型面向主体的顶表面，阴极 接触区域，其具有第一导电类型和比主体更高的掺杂水平，面向主体的底表面;绝缘区域，其延伸穿过主体并将活动区域与身体的其余部分隔离;活动区域容纳 阳极区域和阴极接触区域。 绝缘区域由多晶硅的第一反射镜区域，金属材料的第二反射镜区域和电介质材料的通道停止区域形成，围绕第一和第二反射镜区域。