公开(公告)号：US10206247B2

公开(公告)日：2019-02-12

申请号：US14856473

申请日：2015-09-16

Applicant: STMICROELECTRONICS ASIA PACIFIC PTE LTD ,  STMICROELECTRONICS, INC.

Inventor： Fuchao Wang ,  Olivier Le Neel ,  Ravi Shankar

IPC: H05B3/00 ,  H05B1/02 ,  H05B3/12 ,  H05B3/34 ,  H01L23/34 ,  H05B3/02 ,  H05B3/06

Abstract: An integrated circuit is provided having an active circuit. A heating element is adjacent to the active circuit and configured to heat the active circuit. A temperature sensor is also adjacent to the active circuit and configured to measure a temperature of the active circuit. A temperature controller is coupled to the active circuit and configured to receive a temperature signal from the temperature sensor. The temperature controller operates the heating element to heat the active circuit to maintain the temperature of the active circuit in a selected temperature range.

公开(公告)号：USRE45286E1

公开(公告)日：2014-12-09

申请号：US13890668

申请日：2013-05-09

Applicant: STMicroelectronics, Inc.

Inventor： Olivier Le Neel ,  Peyman Sana ,  Loi Nguyen ,  Venkatesh Mohanakrishnaswamy

IPC: H01L21/00

CPC classification number: B81C1/00246 ,  B81B2201/0271 ,  H01L27/0617

Abstract: An embedded MEMS semiconductor substrate is set forth and can be a starting material for subsequent semiconductor device processing. A MEMS device is formed in a semiconductor substrate, including at least one MEMS electrode and a buried silicon dioxide sacrificial layer has been applied for releasing the MEMS. A planarizing layer is applied over the substrate, MEMS device and MEMS electrode. A polysilicon protection layer is applied over the planarizing layer. A silicon nitride capping layer is applied over the polysilicon protection layer. A polsilicon seed layer is applied over the polysilicon nitride capping layer. The MEMS device is released by removing at least a portion of the buried silicon dioxide sacrificial layer and an epitaxial layer is grown over the polysilicon seed layer to be used for subsequent semiconductor wafer processing.

Abstract translation: 介绍了一种嵌入式MEMS半导体衬底，可以作为后续半导体器件处理的起始材料。 在包括至少一个MEMS电极的半导体衬底中形成MEMS器件，并且已经应用​​了掩埋的二氧化硅牺牲层来释放MEMS。 在衬底，MEMS器件和MEMS电极上施加平坦化层。 在平坦化层上施加多晶硅保护层。 在多晶硅保护层上施加氮化硅覆盖层。 将多晶硅种子层施加在多晶硅氮化物覆盖层上。 通过去除掩埋的二氧化硅牺牲层的至少一部分来释放MEMS器件，并且在多晶硅种子层上生长外延层以用于随后的半导体晶片处理。