公开(公告)号：US20240128289A1

公开(公告)日：2024-04-18

申请号：US18391222

申请日：2023-12-20

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Francois ROY ,  Andrej SULER

IPC: H01L27/146

CPC classification number: H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14689

Abstract: The present disclosure concerns an image sensor including a plurality of pixels, each including: a doped photosensitive region of a first conductivity type extending vertically in a semiconductor substrate; a charge collection region more heavily doped with the first conductivity type than the photosensitive region, extending vertically in the substrate from an upper surface of the substrate and being arranged above the photosensitive region; and a vertical stack including a vertical transfer gate and a vertical electric insulation wall, the stack crossing the substrate and being in contact with the charge collection region, the gate being arranged on the upper surface side of the substrate and penetrating into the substrate deeper than the charge collection region.

公开(公告)号：US20210020675A1

公开(公告)日：2021-01-21

申请号：US16925248

申请日：2020-07-09

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Francois ROY ,  Andrej SULER

IPC: H01L27/146

Abstract: The present disclosure concerns an image sensor including a plurality of pixels, each including: a doped photosensitive region of a first conductivity type extending vertically in a semiconductor substrate; a charge collection region more heavily doped with the first conductivity type than the photosensitive region, extending vertically in the substrate from an upper surface of the substrate and being arranged above the photosensitive region; and a vertical stack including a vertical transfer gate and a vertical electric insulation wall, the stack crossing the substrate and being in contact with the charge collection region, the gate being arranged on the upper surface side of the substrate and penetrating into the substrate deeper than the charge collection region.

公开(公告)号：US20200168646A1

公开(公告)日：2020-05-28

申请号：US16681161

申请日：2019-11-12

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Andrej SULER ,  Francois ROY

IPC: H01L27/146 ,  H01L49/02

Abstract: An integrated imaging device includes a pixel having a trench that extends into the substrate. The trench is coated with an insulator and filled with a stack including a first polysilicon region and a second polysilicon region. The first and second polysilicon regions are separated from each other by a layer of insulating material. The first polysilicon region may form a gate electrode of a vertical transistor and the second polysilicon region may form an electrode of a capacitor.