公开(公告)号：US12087873B2

公开(公告)日：2024-09-10

申请号：US17702186

申请日：2022-03-23

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Antonin Zimmer ,  Dominique Golanski ,  Raul Andres Bianchi

IPC: H01L31/107

CPC classification number: H01L31/107

Abstract: A photodiode is formed in a semiconductor substrate of a first conductivity type. The photodiode includes a first region having a substantially hemispherical shape and a substantially hemispherical core of a second conductivity type, different from the first conductivity type, within the first region. An epitaxial layer covers the semiconductor substrate and buries the first region and core.