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公开(公告)号：US20220020924A1
公开(公告)日：2022-01-20
申请号：US17488026
申请日：2021-09-28
Applicant: STMicroelectronics (Crolles 2) SAS
Inventor： Yann CANVEL , Sebastien LAGRASTA , Sebastien BARNOLA , Christelle BOIXADERAS
IPC: H01L45/00
Abstract: The disclosure concerns an electronic component manufacturing method including a first step of etching at least one first layer followed, with no exposure to oxygen, by a second step of passivating the first layer.
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