公开(公告)号：US20180331136A1

公开(公告)日：2018-11-15

申请号：US15926491

申请日：2018-03-20

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Axel Crocherie ,  Etienne Mortini ,  Jean Luc Huguenin

IPC: H01L27/146

CPC classification number: H01L27/1464 ,  H01L27/14603 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14629 ,  H01L27/14636 ,  H01L27/14643

Abstract: The invention relates to an image sensor and method for reducing image defects. A photoconversion area is formed in a semiconductor layer. An insulating layer formed over the semiconductor layer contains a metal element. A lens over the insulting layer is positioned opposite the photoconversion area to focus light on it. A layer of light-absorbing material is deposited on the side of the metal element facing the lens to prevent reflection of parasitic light rays within the image device.