公开(公告)号：US20140367784A1

公开(公告)日：2014-12-18

申请号：US14300663

申请日：2014-06-10

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Christian Rivero ,  Giulhem Bouton ,  Pascal Fornara

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/06 ,  H01L29/66 ,  H01L21/762

CPC classification number: H01L29/0653 ,  H01L21/76224 ,  H01L21/76229 ,  H01L23/5226 ,  H01L29/0649 ,  H01L29/0847 ,  H01L29/66568 ,  H01L29/7846 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An integrated circuit includes a substrate and at least one NMOS transistor having, in the substrate, an active region surrounded by an insulating region. The insulating region is formed to includes at least one area in which the insulating region has two insulating extents that are mutually separated from each other by a separation region formed by a part of the substrate.

Abstract translation: 集成电路包括衬底和至少一个NMOS晶体管，其在衬底中具有由绝缘区域包围的有源区域。 绝缘区域形成为包括至少一个区域，其中绝缘区域具有通过由基板的一部分形成的分离区域彼此分离的两个绝缘区域。