公开(公告)号：US20140191329A1

公开(公告)日：2014-07-10

申请号：US14143100

申请日：2013-12-30

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Christian Rivero ,  Roger Delattre

IPC: H01L29/66 ,  H01L29/78

CPC classification number: H01L29/7845 ,  H01L21/28052 ,  H01L21/28518 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76855 ,  H01L23/485 ,  H01L29/41766 ,  H01L29/41775 ,  H01L29/66575 ,  H01L29/66636 ,  H01L29/78

Abstract: An integrated circuit includes a MOS transistor having a gate region and source and drain regions separated from the gate region by insulating spacers. At least two metal contact pads respectively contact with two metal silicide regions (for example, a cobalt silicide) which lie within the source and drain regions. The silicide regions are located at the level of lower parts of the two metal contact pads and are separate by a distance from the insulating spacers.

Abstract translation: 集成电路包括具有栅极区域的MOS晶体管和通过绝缘间隔物与栅极区域分离的源极和漏极区域。 至少两个金属接触焊盘分别与位于源极和漏极区域内的两个金属硅化物区域（例如，硅化钴）接触。 硅化物区域位于两个金属接触焊盘的下部的水平处，并且与绝缘间隔物隔开一段距离。