公开(公告)号：US20230387293A1

公开(公告)日：2023-11-30

申请号：US18228309

申请日：2023-07-31

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Rosalia Germana-Carpineto

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L29/7813 ,  H01L29/4236 ,  H01L29/66734

Abstract: A transistor is disclosed. In an embodiment a transistor includes a first semiconductor region of a substrate, a first trench delimiting the first semiconductor region on a first side, a first electrically-conductive element located in the first trench, a channel area in contact with the first semiconductor region and a first area of contact with the first semiconductor region, wherein the channel area and the first area of contact are on the same surface side of the substrate.

公开(公告)号：US20210234014A1

公开(公告)日：2021-07-29

申请号：US17144585

申请日：2021-01-08

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Rosalia Germana-Carpineto

IPC: H01L29/423 ,  H01L29/78 ,  H01L29/10 ,  H01L29/66 ,  H01L21/762

Abstract: An embodiment transistor comprises a semiconductor drain region delimited by a first trench, and, in the first trench, a first electrically conductive element electrically coupled to a node of application of a potential closer to a drain potential of the transistor than to a source potential of the transistor.

公开(公告)号：US11757032B2

公开(公告)日：2023-09-12

申请号：US16867225

申请日：2020-05-05

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Rosalia Germana-Carpineto

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L29/7813 ,  H01L29/4236 ,  H01L29/66734

Abstract: A transistor is disclosed. In an embodiment a transistor includes a first semiconductor region of a substrate, a first trench delimiting the first semiconductor region on a first side, a first electrically-conductive element located in the first trench, a channel area in contact with the first semiconductor region and a first area of contact with the first semiconductor region, wherein the channel area and the first area of contact are on the same surface side of the substrate.

公开(公告)号：US11721734B2

公开(公告)日：2023-08-08

申请号：US17144585

申请日：2021-01-08

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Rosalia Germana-Carpineto

IPC: H01L29/423 ,  H01L21/762 ,  H01L29/10 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/4236 ,  H01L21/76224 ,  H01L29/1095 ,  H01L29/66734 ,  H01L29/7813

Abstract: An embodiment transistor comprises a semiconductor drain region delimited by a first trench, and, in the first trench, a first electrically conductive element electrically coupled to a node of application of a potential closer to a drain potential of the transistor than to a source potential of the transistor.

公开(公告)号：US20200381550A1

公开(公告)日：2020-12-03

申请号：US16867225

申请日：2020-05-05

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Rosalia Germana-Carpineto

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/66

Abstract: A transistor is disclosed. In an embodiment a transistor includes a first semiconductor region of a substrate, a first trench delimiting the first semiconductor region on a first side, a first electrically-conductive element located in the first trench, a channel area in contact with the first semiconductor region and a first area of contact with the first semiconductor region, wherein the channel area and the first area of contact are on the same surface side of the substrate.