公开(公告)号：US20240213153A1

公开(公告)日：2024-06-27

申请号：US18541497

申请日：2023-12-15

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics International N.V. ,  STMicroelectronics France

Inventor： Olivier Weber ,  Rohit Kumar Gupta ,  Eric Vandenbossche

IPC: H01L27/092 ,  H01L23/528 ,  H01L27/02

CPC classification number: H01L27/0928 ,  H01L23/528 ,  H01L27/0207

Abstract: An electronic device including a first active area of a first transistor, a first insulating region forming a first insulation of the first active area, a first insulating gate extending above the first active area and forming a second insulation of the first active area, and a first insulating gate contact coupled to the first insulating gate and positioned above both the first active area and the first insulating region, wherein the first insulating gate contact couples the first insulating gate to a power supply rail.

公开(公告)号：US12136917B2

公开(公告)日：2024-11-05

申请号：US18151337

申请日：2023-01-06

Applicant: STMicroelectronics International N.V.

Inventor： Kallol Chatterjee ,  Rohit Kumar Gupta

IPC: H03K19/0185

Abstract: Provided is a voltage level shifter that operates in sub-threshold voltages. The level shifter includes a level shifting stage. The level shifting stage receives a first signal from a first voltage domain and outputs a second signal to a second voltage domain. The level shifter includes a first auxiliary stage. In response to the first signal having a first voltage level corresponding to a first logical state and a first node of the level shifting stage having a supply voltage level, the first auxiliary stage sources current to a second node of the level shifting stage. Sourcing the current to the second node accelerates a transition of the first node to a reference voltage. The level shifting stage outputs a second signal to a second voltage domain.