公开(公告)号：US20240395924A1

公开(公告)日：2024-11-28

申请号：US18662577

申请日：2024-05-13

Applicant: STMicroelectronics International N.V.

Inventor： Salvatore CASCINO ,  Mario Giuseppe SAGGIO ,  Mario PULVIRENTI

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/16 ,  H01L29/66

Abstract: An electronic device includes a semiconductor body of SiC having an upper surface and a lower surface opposite to each other along a first axis and including: a drain substrate extending into the semiconductor body starting from the bottom surface and with a first electrical conductivity type; a drift layer extending into the semiconductor body starting from the upper surface and with the first electrical conductivity type and a second dopant concentration; a body region accommodated in the drift layer; and a source region accommodated in the body region. The electronic device further includes a gate structure on the upper surface. The semiconductor body further comprises at least one doped pocket region which is buried in the drift layer, has a second electrical conductivity type and is aligned along the first axis with the source region and/or with the gate structure.