公开(公告)号：US20030064558A1

公开(公告)日：2003-04-03

申请号：US10225315

申请日：2002-08-20

Applicant: STMicroelectronics S.r.I.

Inventor： Alessandro Grossi ,  Cesare Clementi

IPC: H01L021/8238

CPC classification number: H01L27/11526 ,  H01L27/1052 ,  H01L27/115 ,  H01L27/11517 ,  H01L27/11536

Abstract: A process for the manufacturing of electronic devices, including memory cells, involving forming, on a substrate of semiconductor material, multilayer stacks including a floating gate region, an intermediate dielectric region, and a control gate region; forming a protective layer extending on top of the substrate and between the multilayer stacks and having a height at least equal to the multilayer stacks. The step of forming multilayer stacks includes the step of defining the control gate region on all sides so that each control gate region is completely separate from adjacent control gate regions. The protective layer isolates the multilayer stacks from each other at the sides. Word lines of metal extend above the protective layer and are in electrical contact with the gate regions.