公开(公告)号：US20150219693A1

公开(公告)日：2015-08-06

申请号：US14615196

申请日：2015-02-05

Applicant: STMicroelectronics S.r.I.

Inventor： Dario Sutera ,  Davide Giuseppe Patti ,  Valeria Cinnera Martino

IPC: G01R15/20 ,  G01R19/00 ,  G01R15/18

CPC classification number: G01R15/202 ,  G01R15/18 ,  G01R15/207 ,  G01R19/0092 ,  G01R33/07

Abstract: The semiconductor integrated device has a conductive region, for example, an external contact pad, configured to be traversed by a current to be measured. A concentrator of magnetic material partially surrounds the conductive region and has an annular shape open at a point defining an air gap area where a sensitive region is arranged, which is electrically conductive and is typically of doped semiconductor material, such as polycrystalline silicon. The device is integrated in a chip formed by a substrate and by an insulating layer, the sensitive region and the concentrator being formed in the insulating layer.

Abstract translation: 半导体集成器件具有导电区域，例如外部接触焊盘，被配置为被被测量的电流穿过。 磁性材料的集中器部分地围绕导电区域并且具有在限定气隙区域的位置处的环形形状，其中布置有敏感区域，该敏感区域是导电的并且通常是掺杂半导体材料，例如多晶硅。 该器件集成在由衬底形成的芯片和绝缘层中，敏感区域和集中器形成在绝缘层中。