公开(公告)号：US20030030130A1

公开(公告)日：2003-02-13

申请号：US10208258

申请日：2002-07-29

Applicant: STMicroelectronics S.r.I.

Inventor： Luca Pividori

IPC: H01L029/06

CPC classification number: H01L21/304 ,  B28D5/0011 ,  H01L21/78

Abstract: A semiconductor device including an electronic component and an edge region delimited by a side surface. The device is formed in a substrate of semiconductor material overlaid by a plurality of superficial layers which form, on top of the edge region, a stack of insulating layers. A first groove extends in the stack of insulating layers near the electronic component. A second groove extends in the stack of insulating layers between the first groove and the side surface and operates as an element of mechanical decoupling which blocks any possible delayering of the superficial layers during cutting of the wafer.

Abstract translation: 一种包括电子部件和由侧面限定的边缘区域的半导体器件。 该器件形成在由多个表面层覆盖的半导体材料的衬底中，该多个表面层在边缘区域的顶部形成绝缘层堆叠。 第一凹槽在靠近电子部件的绝缘层堆叠中延伸。 第二凹槽在第一凹槽和侧表面之间的绝缘层堆叠中延伸，并且作为机械去耦元件而工作，其阻止在切割晶片期间表面层的任何可能的延迟。