Multilayer metal structure of supply rings with large parasitic capacitance
    1.
    发明申请
    Multilayer metal structure of supply rings with large parasitic capacitance 有权
    多层金属结构的电源环具有大的寄生电容

    公开(公告)号:US20040041268A1

    公开(公告)日:2004-03-04

    申请号:US10456940

    申请日:2003-06-06

    Inventor: Marco Montagnana

    Abstract: A multilayer metal supply rings structure of an integrated circuit comprises at least two parallel perimetral metal rails defined in metal layers of different levels, geometrically superposed one to the other. Each rail is constituted by using definition juxtaposed modules, each module defining on a metal layer parallel segments, longitudinally separated by a separation cut, of each rail, superposed rails of said multilayer structure constituting one supply node being electrically interconnected through a plurality of interconnection vias through dielectric isolation layers between different metal levels. A feature of the multilayer metal supply rings structure is that the segments of each of said perimetral metal rails modularly defined on each metal level belong alternately to one and another supply node upon changing the metal level. A process of defining a multilayer metal supply rings structure is also disclosed.

    Abstract translation: 集成电路的多层金属供给环结构包括至少两个平行的周边金属导轨,其以不同级别的金属层限定,几何地彼此重叠。 每个轨道通过使用定义并置的模块构成,每个模块在每个轨道上在金属层上限定由纵向分隔开的纵向隔开的平行段,构成一个供应节点的多层结构的叠置轨道通过多个互连通孔电互连 通过不同金属层之间的介电隔离层。 多层金属供给环结构的特征在于,在每个金属层上模块化地限定的每个所述周边金属轨道的段在改变金属水平时交替地属于一个和另一个供应节点。 还公开了一种限定多层金属供应环结构的方法。

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