Driving circuit for a control terminal of a bipolar transistor in an emitter-switching configuration and corresponding method for reducing the VCESAT dynamic phenomenon
    1.
    发明申请
    Driving circuit for a control terminal of a bipolar transistor in an emitter-switching configuration and corresponding method for reducing the VCESAT dynamic phenomenon 有权
    用于发射极开关配置的双极型晶体管的控制端子的驱动电路以及减少VCESAT动态现象的相应方法

    公开(公告)号:US20040217801A1

    公开(公告)日:2004-11-04

    申请号:US10794788

    申请日:2004-03-05

    CPC classification number: H03K17/04126 H03K17/567

    Abstract: A driving circuit is provided for a control terminal of a bipolar transistor in an emitter-switching configuration. The emitter-switching configuration is between first and second voltage references. The driving circuit includes at least one first resistive element connected to the control terminal of the bipolar transistor and a first capacitor connected to the resistive element with respect to a first circuit node and to the second voltage reference. The driving circuit further includes a Zener diode connected between the first circuit node and a second circuit node, and a second capacitor between the second circuit node and the second voltage reference.

    Abstract translation: 为发射极 - 开关配置的双极晶体管的控制端提供驱动电路。 发射极 - 开关配置在第一和第二电压基准之间。 驱动电路包括连接到双极晶体管的控制端的至少一个第一电阻元件和相对于第一电路节点和第二电压基准连接到电阻元件的第一电容器。 驱动电路还包括连接在第一电路节点和第二电路节点之间的齐纳二极管,以及在第二电路节点和第二电压基准之间的第二电容器。

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