Ion-implantation machine, control method thereof, and process for manufacturing integrated devices
    1.
    发明申请
    Ion-implantation machine, control method thereof, and process for manufacturing integrated devices 失效
    离子注入机,其控制方法及制造集成装置的方法

    公开(公告)号:US20040121498A1

    公开(公告)日:2004-06-24

    申请号:US10657801

    申请日:2003-09-08

    CPC classification number: H01J37/3171 H01J37/18 H01J2237/022

    Abstract: An ion-implantation machine has an implantation chamber with a vent inlet; a vacuum pump is connected to the implantation chamber through a vacuum valve. A pipe connects the vent inlet of the implantation chamber to a source of a fluid containing oxygen. The fluid containing oxygen is preferably environmental air. A flow-rate control valve is arranged on the pipe and is activated only after closing the vacuum valve.

    Abstract translation: 离子注入机具有具有通气口的注入室; 真空泵通过真空阀与注入室连接。 管将注入室的排气入口连接到含有氧气的流体源。 含氧的流体优选是环境空气。 流量控制阀配置在管道上,仅在关闭真空阀后启动。

Patent Agency Ranking