METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND CORRESPONDING SEMICONDUCTOR DEVICE

    公开(公告)号:US20220352047A1

    公开(公告)日:2022-11-03

    申请号:US17728298

    申请日:2022-04-25

    Abstract: A semiconductor device, such as a QFN (Quad-Flat No-lead) package, includes an insulating encapsulation of a semiconductor chip. The insulating encapsulation is formed by a first encapsulation material which encapsulates the semiconductor chip and a second encapsulation material that is molded onto an upper surface of the first encapsulation material. The first encapsulation material includes an oblique cavity extending from the upper surface. The second encapsulation material includes an anchoring protrusion that enters into the cavity.

    SEMICONDUCTOR DEVICE, CORRESPONDING MANUFACTURING METHODS AND COMPONENT

    公开(公告)号:US20220173021A1

    公开(公告)日:2022-06-02

    申请号:US17539653

    申请日:2021-12-01

    Abstract: A semiconductor device includes a leadframe having a semiconductor chip arranged thereon and an electrically-insulating encapsulation molded onto the leadframe and the semiconductor chip. The leadframe is a pre-molded leadframe including a coupling surface having an alternation of electrically-conductive parts and insulating parts between electrically-conductive parts. The coupling surface includes a pattern of grooves and the electrically-insulating encapsulation includes anchoring protrusions extending into the grooves of the pattern of grooves in the coupling surface.

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