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公开(公告)号：US20230240160A1
公开(公告)日：2023-07-27
申请号：US18099528
申请日：2023-01-20
Applicant: STMicroelectronics S.r.l.
Inventor： Mario ALLEGRA , Andrea REDAELLI
CPC classification number: H10N70/8413 , H10N70/231 , H10N70/011
Abstract: A phase-change memory cell includes a heater, a memory region made of a phase-change material located above said heater, and an electrically conductive element positioned adjacent to the memory region and the heater at a first side of the heater. The electrically conductive element extends parallel to a first axis and has, parallel to the first axis, a first dimension at the first side that is greater than a second dimension at a second side opposite to the first side.
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