公开(公告)号：US20160307640A1

公开(公告)日：2016-10-20

申请号：US14956963

申请日：2015-12-02

Applicant: STMicroelectronics SA

Inventor： Philippe Candelier ,  Antoine Benoist ,  Stephane Denorme ,  Joel Damiens

IPC: G11C17/16 ,  G11C17/18

CPC classification number: G11C17/165 ,  G11C5/145 ,  G11C5/147 ,  G11C7/04 ,  G11C17/16 ,  G11C17/18

Abstract: A memory cell of the one-time-programmable type is programmed by application of a programming voltage having a value sufficient to obtain a breakdown of a dielectric of a capacitor within the cell. A programming circuit generates the programming voltage as a variable voltage that varies as a function of a temperature (T) of the cell. In particular, the programming voltage varies based on a variation law decreasing as a function of the temperature.

Abstract translation: 通过施加具有足以获得电池内的电容器的电介质的击穿的编程电压来编程一次性可编程类型的存储单元。 编程电路产生编程电压作为可变电压，其随电池的温度（T）而变化）。 特别地，编程电压根据作为温度的函数的变化规律减小而变化。