公开(公告)号：US09430592B2

公开(公告)日：2016-08-30

申请号：US13689997

申请日：2012-11-30

Applicant: STMicroeletronics SA

Inventor： Jean-Robert Manouvrier

IPC: G06F17/50 ,  G06G7/62

CPC classification number: G06F17/5009 ,  G06F17/5036

Abstract: A method for simulating, in an electrical device simulator, electrical behavior of an integrated diode is described. The diode is modelled using a compact model in the electrical device simulator to determine the electrical behavior of the diode in a given situation. The modelling includes modelling a series resistance relating to the active regions and to the connections, modelling a PN junction of the diode, and modelling a well resistance for positive values of a current passing through the diode involving a conductivity modulation model. The method further includes modelling of the well resistance for negative values of the current by a curve which increases steeply from an initial resistance value corresponding to a zero value of current up to a plateau.

Abstract translation: 描述了在电气设备模拟器中模拟集成二极管的电气行为的方法。 在电气设备模拟器中使用紧凑型模型对二极管进行建模，以确定给定情况下二极管的电气行为。 该建模包括对与有源区和连接相关的串联电阻进行建模，对二极管的PN结进行建模，以及对通过涉及电导率调制模型的二极管的电流的正值对阱电阻建模。 该方法还包括通过由对应于电流零值直到平稳的初始电阻值急剧上升的曲线来模拟电流负值的电流值。

公开(公告)号：US20130151224A1

公开(公告)日：2013-06-13

申请号：US13689997

申请日：2012-11-30

Applicant: STMICROELETRONICS SA

Inventor： Jean-Robert Manouvrier

IPC: G06F17/50

CPC classification number: G06F17/5009 ,  G06F17/5036

Abstract: The diode is modelled using a compact model comprising modelling of the well resistance for negative values of the current by a curve which increases steeply from an initial resistance value corresponding to a zero value of current up to a plateau.

Abstract translation: 使用紧凑型模型对二极管进行建模，该模型包括通过从对应于电流零值直到平稳的初始电阻值急剧增加的曲线来模拟电流负值的电阻值。