公开(公告)号：US20230340691A1

公开(公告)日：2023-10-26

申请号：US18026975

申请日：2021-09-21

申请人： SUMCO Corporation

发明人： Shogo KOBAYASHI ,  Norihito FUKATSU ,  Takahiro KANEHARA ,  Hitomi YAMAMOTO

IPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/04

CPC分类号： C30B15/04 ,  C30B15/14 ,  C30B29/06

摘要： Provided is a manufacturing method of a silicon single crystal according to the present invention includes a melting process for generating a silicon melt containing a primary dopant, and a crystal pulling-up process that pulls up a silicon single crystal from the silicon melt. The crystal pulling-up process includes at least one additional doping process for adding a dopant raw material containing a secondary dopant into the silicon melt. A flow rate of Ar gas during a first period in which the secondary dopant is not added is set as a first flow rate, and the flow rate of Ar gas during a second period that includes a period in which the secondary dopant is added is set as a second flow rate that is greater than the first flow rate..---